PART |
Description |
Maker |
W49L102Q-55 W49L102Q-55B W49L102Q-70 W49L102Q-70B |
64K X 16 CMOS 3.3V FLASH MEMORY
|
WINBOND[Winbond]
|
W49F102Q45 W49F102P40 W49F102P45 W49F102Q40 |
64K X 16 CMOS FLASH MEMORY
|
Winbond Electronics
|
AT49BV512-12JC AT49BV512-12JI AT49BV512-12PC AT49B |
512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory 64K X 8 FLASH 2.7V PROM, 150 ns, PDSO32
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
AN28F512-120 |
512K (64K x 8) CMOS FLASH MEMORY
|
Intel Corp.
|
A29512A A29512A-55 A29512A-70 A29512A-90 A29512AL- |
64K X 8 Bit CMOS 5.0 Volt-only/ Uniform Sector Flash Memory 512K X 8 Bit CMOS 5.0 Volt-only/ Uniform Sector Flash Memory 64K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory 64K X 8 Bit CMOS 5.0 Volt-only Uniform Sector Flash Memory
|
AMICC[AMIC Technology]
|
CAT1026LI-45-GT3 CAT1026LI-45T3 CAT25C04LI-1.8TE13 |
Dual Voltage Supervisory Circuits with I2C Serial 2k-bit CMOS EEPROM 1K/2K/4K SPI Serial CMOS EEPROM 16K-Bit CMOS PARALLEL EEPROM 64K-Bit CMOS PARALLEL EEPROM 512K-Bit CMOS Flash Memory 32K/64K-Bit SPI Serial CMOS EEPROM 1 Megabit CMOS Flash Memory 512K-Bit CMOS PARALLEL EEPROM 1 Megabit CMOS Boot Block Flash Memory 256K-Bit CMOS PARALLEL EEPROM Supervisory Circuits with I2C Serial CMOS EEPROM, Precision Reset Controller and Watchdog Timer Precision, Adjustable Shunt Regulator Supervisory Circuits with I2C Serial Serial CMOS EEPROM, Precision Reset Controller and Watchdog Timer 128K/256K-Bit SPI Serial CMOS EEPROM 16K-Bit Serial EEPROM, Cascadable
|
CATALYST[Catalyst Semiconductor]
|
TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位)的CMOS闪存 32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY 32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp. Toshiba Corporation
|
W27E520S-70 W27520 W27E520W-90 W27E520 W27E520S-90 |
64K X 8 ELECTRICALLY ERASABLE EPROM 64K X 8 EEPROM 5V, 70 ns, PDSO20 BOX 3.05X1.51X1.05 W/1 BTN ALMOND FLASH MEMORY
|
Winbond Electronics, Corp. Winbond Electronics Corp WINBOND[Winbond]
|
M6MGB_T160S4BVP M6MGB M6MGB160S4BVP M6MGT160S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY 16,777,216-BIT CMOS 3.3V-ONLY FLASH MEMORY CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms 0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc. SPANSION LLC ADVANCED MICRO DEVICES INC
|